KCB Solutions, LLC 900 Mount Laurel Circle Shirley, MA 01464. 978-425-0400 info@kcbsolutions.com. We are currently experiences technical difficulties with our phone system. Such FETs are manufactured using a variety of materials such as silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), and indium gallium arsenide (InGaAs). In June 2011, IBM announced that it had successfully used graphene-based FETs in an. KCB Solutions, LLC 900 Mount Laurel Circle Shirley, MA 01464. 978-425-0400 info@kcbsolutions.com. We are currently experiences technical difficulties with our phone system. L & S BAND / 2.5W. DESCRIPTION The MGF0905A, GaAs FET with an N-channel schott ky. Gate, is designed for use L & S band amplifiers. FEATURES. High output power. Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm. High power gain. Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm. The MFG1302 is a low-noise GaAs FET with an N-Channel Schottky gate, which is designed for use in the S to X band amplifiers and oscillators. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration.
Angle Linear has been producing GaAs FET preamplifiers since 1980.Primarily used in commercial applications, these preamplifiersrepresent the best of present day technology in receiver front enddesign. We are continuously upgrading these amplifiers as newerdevices are made available and as such, we now use PHEMT devices inall of our preamplifiers. PHEMTs are a better version of a GaAsFETdevice. Common port inductance, an integral part of every amplifierdesign, yields excellent input and output return losses whilemaintaining the low noise figure characteristics of PHEMT devices andenhancing stability. Angle Linear guarantees unconditional stabilityof every preamplifier. There are no stability problems when cascadingour preamplifiers with Hi-Q band pass filters in repeater andreceiver multicoupler applications. We have thousands of theseamplifiers in operation throughout the world today. All tuning andsignal path capacitors are ATC 600F low loss microwave type.
down load data sheet:phemt.pdf
Typical network analyzer plots forvarious models of PHEMT preamplifiers
Noise figure is typically 0.4 below 200 MHz, 0.5 dB to 700 MHz,0.7 dB to 1 GHz.
Gain is typically: >20 dB below 300 MHz; 17 dB to 510 MHz; 16to 750 MHz, 15 dB to 850 MHz; and 14 dB to 1GHz.
Input and output return loss are typically much greater than 15dB.
Output compression levels are typically +12 dBm and 3rd orderintercepts are typically +26 dBm.
Every preamplifier has over and reverse voltage protection.External and internal high voltage transient suppressors provides40kV, 1 micro sec. pulse protection. Internal voltage regulationpermits operation from +9 to +18 VDC with higher voltage optionsavailable. DC current requirement is typically 40 mA for the singleamplifiers. Higher operating voltages (<35VDC) are available.
Tri-Metal (Alballoy) connectors have ptfe (Teflon) dielectric withgold pins and are available in type N, TNC and SMA (ss). Dimensions:1.5'x 2.5'x 0.7'.
Connectors: N = N, T = TNC, S = SMA
Jan 2014
Gaas Fet
We have here for sale, a used untested Furuno model 1830 radar. Comes with sun shield. Please look at all of the pictures closely and make sure that you have a correct address for shipping listed with eBay/Paypal, as we will ship only to the U.S.A. address listed with eBay/Paypal.